The effect of the active layer thickness on the performance of pentacene-based phototransistors
Identifieur interne : 001378 ( Main/Repository ); précédent : 001377; suivant : 001379The effect of the active layer thickness on the performance of pentacene-based phototransistors
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Abstract
In this paper, we discuss the fabrication and characterization of pentacene-based phototransistors using indium tin oxide as a transparent electrical gate and PMMA as a transparent dielectric gate. The photoelectric properties with different pentacene film thicknesses were characterized under ultraviolet (365 nm) illumination. We observed that for the thinner pentacene films, the threshold voltage upon UV illumination was shifted from its initial value in the dark to a positive voltage of more than 16V, whereas the shift was only of 3 V for thicker films. Thus, we obtained a higher photosensitivity of 6.5 x 104 for thinner pentacene films, which indicates that the organic thin film transistors could find use in photodetector applications.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The effect of the active layer thickness on the performance of pentacene-based phototransistors</title><author><name sortKey="El Amrani, A" uniqKey="El Amrani A">A. El Amrani</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LPSMS, FST Errachidia, B.P. 509, Boutalamine, Errachidia, University My Ismail</s1><s3>MAR</s3><sZ>1 aut.</sZ></inist:fA14><country>Maroc</country><wicri:noRegion>LPSMS, FST Errachidia, B.P. 509, Boutalamine, Errachidia, University My Ismail</wicri:noRegion></affiliation></author><author><name sortKey="Lucas, B" uniqKey="Lucas B">B. Lucas</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>XLIM UMR 6172, Université de Limoges/CNRS, 123 Avenue Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Limoges</settlement></placeName></affiliation></author><author><name sortKey="Ratier, B" uniqKey="Ratier B">B. Ratier</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>XLIM UMR 6172, Université de Limoges/CNRS, 123 Avenue Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Limoges</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0208077</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0208077 INIST</idno><idno type="RBID">Pascal:12-0208077</idno><idno type="wicri:Area/Main/Corpus">001E06</idno><idno type="wicri:Area/Main/Repository">001378</idno></publicationStmt><seriesStmt><idno type="ISSN">0379-6779</idno><title level="j" type="abbreviated">Synth. met.</title><title level="j" type="main">Synthetic metals</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Active layer</term><term>Illumination</term><term>Indium oxide</term><term>Methyl methacrylate polymer</term><term>Organic electronics</term><term>Pentacene</term><term>Pentacene derivatives</term><term>Performance evaluation</term><term>Photodetector</term><term>Photosensitivity</term><term>Phototransistor</term><term>Response function</term><term>Thin film transistor</term><term>Tin addition</term><term>Voltage threshold</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Couche active</term><term>Evaluation performance</term><term>Phototransistor</term><term>Addition étain</term><term>Eclairement</term><term>Seuil tension</term><term>Photosensibilité</term><term>Transistor couche mince</term><term>Electronique organique</term><term>Photodétecteur</term><term>Fonction réponse</term><term>Dérivé du pentacène</term><term>Oxyde d'indium</term><term>Méthacrylate de méthyle polymère</term><term>Pentacène</term><term>ITO</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this paper, we discuss the fabrication and characterization of pentacene-based phototransistors using indium tin oxide as a transparent electrical gate and PMMA as a transparent dielectric gate. The photoelectric properties with different pentacene film thicknesses were characterized under ultraviolet (365 nm) illumination. We observed that for the thinner pentacene films, the threshold voltage upon UV illumination was shifted from its initial value in the dark to a positive voltage of more than 16V, whereas the shift was only of 3 V for thicker films. Thus, we obtained a higher photosensitivity of 6.5 x 10<sup>4</sup> for thinner pentacene films, which indicates that the organic thin film transistors could find use in photodetector applications.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0379-6779</s0></fA01><fA02 i1="01"><s0>SYMEDZ</s0></fA02><fA03 i2="1"><s0>Synth. met.</s0></fA03><fA05><s2>161</s2></fA05><fA06><s2>23-24</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The effect of the active layer thickness on the performance of pentacene-based phototransistors</s1></fA08><fA11 i1="01" i2="1"><s1>EL AMRANI (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>LUCAS (B.)</s1></fA11><fA11 i1="03" i2="1"><s1>RATIER (B.)</s1></fA11><fA14 i1="01"><s1>LPSMS, FST Errachidia, B.P. 509, Boutalamine, Errachidia, University My Ismail</s1><s3>MAR</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>XLIM UMR 6172, Université de Limoges/CNRS, 123 Avenue Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>2566-2569</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18315</s2><s5>354000508877860110</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>21 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0208077</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Synthetic metals</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>In this paper, we discuss the fabrication and characterization of pentacene-based phototransistors using indium tin oxide as a transparent electrical gate and PMMA as a transparent dielectric gate. The photoelectric properties with different pentacene film thicknesses were characterized under ultraviolet (365 nm) illumination. We observed that for the thinner pentacene films, the threshold voltage upon UV illumination was shifted from its initial value in the dark to a positive voltage of more than 16V, whereas the shift was only of 3 V for thicker films. 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